| 摘要 |
A field effect transistor is provided with a source electrode; a drain electrode, which is a metal electrode; a semiconductor layer arranged to be brought into contact with both the source electrode and the drain electrode; and a gate electrode arranged to face at least a part of the semiconductor layer. The gate electrode is provided with the first gate electrode and a second gate electrode arranged closer to the drain electrode than the first gate electrode. The second gate electrode is connected to the drain electrode so as to be at the same potential as the drain electrode, and is electrically independent from the first gate electrode. Thus, in a display device, reduction of a pixel area and a bus wiring width is suppressed while suppressing a leak current during a time the device is turned off. |
