发明名称 MANUFACTURING METHOD OF POLYCRYSTALLINE SILICON THIN FILM, POLYCRYSTALLINE SILICON THIN FILM SUBSTRATE AND POLYCRYSTALLINE SILICON THIN FILM TYPE SOLAR BATTERY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a polycrystalline silicon thin film capable of improving conversion efficiency, a polycrystalline silicon thin film substrate and a polycrystalline silicon thin film type solar battery. <P>SOLUTION: The manufacturing method of the polycrystalline silicon thin film comprises a process of forming an amorphous silicon layer 2 on a glass substrate 1, a process of forming an aluminum layer 3 composed of a metal which eutectically reacts with silicon on the amorphous silicon layer 2, and a process of heating a laminated substrate. By the heating, the amorphous silicon of the amorphous silicon layer 2 is dissolved in the aluminum layer 3 and crystallized to form a polycrystalline silicon layer 4. The polycrystalline silicon thin film substrate 40 which has the aluminum layer 3 formed on the glass substrate 1 and the polycrystalline silicon layer 4 formed on the aluminum layer 3 is obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009021525(A) 申请公布日期 2009.01.29
申请号 JP20070184907 申请日期 2007.07.13
申请人 FURUKAWA ELECTRIC CO LTD:THE;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 KURASEKO HIROSHI;ORITA NOBUAKI;KOAIZAWA HISASHI;KONDO MICHIO
分类号 H01L21/20;H01L31/04 主分类号 H01L21/20
代理机构 代理人
主权项
地址