发明名称 |
MANUFACTURING METHOD OF POLYCRYSTALLINE SILICON THIN FILM, POLYCRYSTALLINE SILICON THIN FILM SUBSTRATE AND POLYCRYSTALLINE SILICON THIN FILM TYPE SOLAR BATTERY |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a polycrystalline silicon thin film capable of improving conversion efficiency, a polycrystalline silicon thin film substrate and a polycrystalline silicon thin film type solar battery. <P>SOLUTION: The manufacturing method of the polycrystalline silicon thin film comprises a process of forming an amorphous silicon layer 2 on a glass substrate 1, a process of forming an aluminum layer 3 composed of a metal which eutectically reacts with silicon on the amorphous silicon layer 2, and a process of heating a laminated substrate. By the heating, the amorphous silicon of the amorphous silicon layer 2 is dissolved in the aluminum layer 3 and crystallized to form a polycrystalline silicon layer 4. The polycrystalline silicon thin film substrate 40 which has the aluminum layer 3 formed on the glass substrate 1 and the polycrystalline silicon layer 4 formed on the aluminum layer 3 is obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009021525(A) |
申请公布日期 |
2009.01.29 |
申请号 |
JP20070184907 |
申请日期 |
2007.07.13 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
KURASEKO HIROSHI;ORITA NOBUAKI;KOAIZAWA HISASHI;KONDO MICHIO |
分类号 |
H01L21/20;H01L31/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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