发明名称 RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition for immersion exposure which inhibits elution into an immersion medium and does not impair the function of resist in an immersion exposure technique, has a high contact angle to the immersion medium, and is capable of forming a fine resist pattern, and a method for manufacturing a semiconductor device using the same. <P>SOLUTION: The resist composition for immersion exposure includes a resin having a silicon-containing side chain and capable of being turned alkali-soluble by an acid, besides a resist matrix resin, wherein the content of the silicon in all the resins is &le;1 mass%. The method for manufacturing a semiconductor device includes a step of forming a resist pattern on a surface to be processed by forming a resist film on the surface using the resist composition for immersion exposure, irradiating the resist film with exposure light by immersion exposure, and developing it, and a step of transferring the pattern to the surface to be processed by etching through the resist pattern as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009058632(A) 申请公布日期 2009.03.19
申请号 JP20070224245 申请日期 2007.08.30
申请人 FUJITSU LTD 发明人 NOZAKI KOJI;OZAWA YOSHIKAZU
分类号 G03F7/039;C08F230/08;G03F7/075;H01L21/027 主分类号 G03F7/039
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