Semiconductor device with dynamic low voltage triggering mechanism

摘要

An electrostatic discharge (ESD) protection device is disclosed, which includes a substrate of a positive dopant type; a p-well defined in the substrate; a depletion inducing structure of a negative dopant type having a gap defined in a bottom portion thereof disposed in the p-well, and a n-channel device disposed in a planar encircled region defined by the depletion inducing structure. The well region is in connection with the substrate through the depletion inducing structure. Upon an ESD stress, the depletion inducing structure induces an expanded depletion region in the substrate under the well region, thus providing a substrate trigger mechanism that reduces the triggering voltage of the ESD protection device.

主权项

1. A semiconductor structure, comprising:
a substrate of a first dopant type; a well region of the first dopant type disposed in the substrate; and a depletion inducing structure of a second dopant type having a gap defined therein at least partially arranged in the well region; wherein the well region is connected to the substrate through the gap in the depletion inducing structure.