发明名称 |
DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP III-V ACTIVE LAYER |
摘要 |
Deep gate-all-around semiconductor devices having germanium or group III-V active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate. The hetero-structure includes a hetero-junction between an upper layer and a lower layer of differing composition. An active layer is disposed above the hetero-structure and has a composition different from the upper and lower layers of the hetero-structure. A gate electrode stack is disposed on and completely surrounds a channel region of the active layer, and is disposed in a trench in the upper layer and at least partially in the lower layer of the hetero-structure. Source and drain regions are disposed in the active layer and in the upper layer, but not in the lower layer, on either side of the gate electrode stack. |
申请公布号 |
US2016233344(A1) |
申请公布日期 |
2016.08.11 |
申请号 |
US201615134093 |
申请日期 |
2016.04.20 |
申请人 |
Pillarisetty Ravi;Rachmady Willy;Le Van H.;Sung Seung Hoon;Kachian Jessica S.;Kavalieros Jack T.;Then Han Wui;Dewey Gilbert;Radosavljevic Marko;Chu-Kung Benjamin;Mukherjee Niloy |
发明人 |
Pillarisetty Ravi;Rachmady Willy;Le Van H.;Sung Seung Hoon;Kachian Jessica S.;Kavalieros Jack T.;Then Han Wui;Dewey Gilbert;Radosavljevic Marko;Chu-Kung Benjamin;Mukherjee Niloy |
分类号 |
H01L29/786;H01L29/423;H01L29/66;H01L29/06 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A non-planar semiconductor device, comprising:
a buffer layer disposed above a substrate: an active layer disposed above the buffer layer; a gate electrode stack disposed on and completely surrounding a channel region of the active layer, and disposed in a trench in the butler layer; source and drain regions disposed adjacent the channel region, on either side of the gate electrode stack; and isolation regions adjacent the source and drain regions and disposed at least partially into the buffer layer, wherein the gate electrode stack is disposed to a depth in the buffer layer deeper than a depth of the isolation regions. |
地址 |
Portland OR US |