发明名称 SUBSTRATE HEAT TREATMENT APPARATUS AND SUBSTRATE TEMPERATURE ADJUSTMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate heat treatment apparatus and a substrate temperature adjustment method, capable of making a temperature distribution uniform when there is a variation of the temperature distribution only in a partial regions of a substrate.SOLUTION: A plurality of accommodating compartments 25 is formed to a mounting plate 20 of quartz in a square shape. The mounting plate 20 is provided between a semiconductor wafer in a chamber and a halogen lamp of a chamber outer part. When light is irradiated from a halogen lamp, and a preheating of the semiconductor wafer is performed without performing a special adjustment, a convex lens, a concave lens, or an optical element of an opaque quartz member are housed in the accommodating compartment 25 opposite to the uneven region in a case where there is an uneven region different from the other region in a substrate temperature distribution. Luminous intensity of the light irradiated to a small region of the semiconductor wafer opposite to the accommodating compartment 25 is adjusted by the housed optical element, the temperature of the small region is modified, and the temperature distribution can be made uniform.SELECTED DRAWING: Figure 8
申请公布号 JP2016162880(A) 申请公布日期 2016.09.05
申请号 JP20150040112 申请日期 2015.03.02
申请人 SCREEN HOLDINGS CO LTD 发明人 FUJII SADAMU
分类号 H01L21/26;H01L21/265;H01L21/683 主分类号 H01L21/26
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