| 摘要 |
PROBLEM TO BE SOLVED: To improve embedding properties of a metal wiring film to a hole.SOLUTION: A manufacturing method of a semiconductor device, comprises steps of: forming holes 21a and 30a to insulation films 21 and 30 of a semiconductor substrate 1 to which a semiconductor element is formed; forming a first metal wiring film 24a to be electrically connected with the semiconductor element on the insulation films 21 and 30 including the holes 21a and 30a by a low-temperature sputtering method; performing a reverse sputtering processing, after the first metal wiring film 24a is formed, that applies a high frequency voltage to the semiconductor substrate 1, radiates an inactive gas ionized in a plasma with a high energy to a surface of the first metal wiring film 24a; and forming a second metal wiring film 24b that is embedded into the holes 21a and 30a in a state where the first metal wiring film 24a is used as a base, is made of the same material as the first metal wiring film 24a, and is electrically connected to the semiconductor element after the reverse sputtering processing is performed to the surface of first metal wiring film 24a, by a high-temperature sputtering method.SELECTED DRAWING: Figure 3 |
