| 摘要 |
<p>A method for manufacturing a non-volatile memory device to suppress interference between cells and a device thereby are provided to prevent threshold voltage of a second channel region in a second cell memory transistor from being changed due to threshold voltage change occurring at a first channel region of a first cell memory transistor by obtaining enough effective distance between channel regions of two adjacent memory transistors. A method for manufacturing a non-volatile memory device to suppress interference between cells includes the steps of: forming isolation layer patterns defining an active region, on a semiconductor substrate(100); alternately aligning first and second gate positions(301,303) of a line shape crossing the isolation layer patterns; forming a recess(103) by etching the active region part at the second gate position selectively; depositing a tunnel layer(410), a charge trapping layer(430), and a charge blocking layer(450) on the active region sequentially which extends to the recess; forming a gate layer(510) on the charge blocking layer; and forming a second gate stack(503) filling a first gate stack(501) and the recess by patterning the gate layer, the charge blocking layer, the charge trapping layer, and the tunnel layer; thereby obtaining enough effective distance between channel regions(105,106) of two adjacent memory transistors.</p> |
