| 发明名称 | Method of manufacturing semiconductor device and substrate processing apparatus | ||
| 摘要 | An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and (a-2) supplying a reaction gas composed of carbon, nitrogen, and hydrogen to the substrate in the process container; and (b) modifying byproduct adhered to an inside of the process container by supplying a nitriding gas into the process container after (a). | ||
| 申请公布号 | US9460916(B2) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514939901 | 申请日期 | 2015.11.12 |
| 申请人 | HITACHI KOKUSAI ELECTRIC INC. | 发明人 | Shimamoto Satoshi;Orihashi Yugo;Hashimoto Yoshitomo;Hirose Yoshiro |
| 分类号 | H01L21/31;H01L21/02;B08B7/00 | 主分类号 | H01L21/31 |
| 代理机构 | Volpe and Koenig, P.C. | 代理人 | Volpe and Koenig, P.C. |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and(a-2) supplying a reaction gas composed of carbon, nitrogen, and hydrogen to the substrate in the process container; and (b) modifying byproduct adhered to an inside of the process container by supplying a nitriding gas into the process container after (a). | ||
| 地址 | Tokyo JP | ||