| 摘要 |
PROBLEM TO BE SOLVED: To achieve a longer oscillation wavelength using a semiconductor laser comprising an active layer of a multi-quantum well structure formed on an InP substrate.SOLUTION: A semiconductor laser includes: a semiconductor layer 102 which is composed of InP formed on a substrate 101 composed of an n-type InP; a well layer 103 which is formed on the semiconductor layer 102 and composed of InGaAsSb; and an active layer 105 of a multi-quantum well structure which is constituted by a barrier layer 104 composed of a III-V group compound semiconductor containing As and Sb.SELECTED DRAWING: Figure 1 |
