Self-aligned isolation structures and light filters

摘要

An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

主权项

1. An image sensor, the image sensor comprising:
a semiconductor layer including a plurality of photodiodes, wherein the semiconductor layer has a front side and a back side; a plurality of isolation structures disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes, wherein the plurality of isolation structures extends into the back side of the semiconductor layer a first depth and extends out of the back side of the semiconductor layer a first length; a plurality of light filters disposed proximate to the back side of the semiconductor layer, wherein the plurality of isolation structures is disposed between individual light filters in the plurality of light filters; and an antireflection coating disposed between the semiconductor layer and the plurality of light filters.