| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a core insulating film, a channel film surrounding the core insulating film and extending to a higher level than an upper surface of the core insulating film to have a first end of the channel film exposed over the core insulating film, a channel pad formed over an inner wall of the first end of the channel film exposed over the core insulating film, and a contact plug coupled to the channel pad. | ||
| 申请公布号 | US9520408(B2) | 申请公布日期 | 2016.12.13 |
| 申请号 | US201514698571 | 申请日期 | 2015.04.28 |
| 申请人 | SK Hynix Inc. | 发明人 | Kim Tae Kyung |
| 分类号 | H01L21/20;H01L27/115;H01L23/528;H01L23/535;H01L21/768 | 主分类号 | H01L21/20 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: a core insulating film; a channel film surrounding the core insulating film and extending to a higher level than an upper surface of the core insulating film to have a first end of the channel film exposed over the core insulating film; a channel pad formed over an inner wall of the first end of the channel film exposed over the core Insulating film; and a contact plug coupled to the channel pad. | ||
| 地址 | Gyeonggi-do KR | ||