发明名称 Bumpless build-up layer (BBUL) semiconductor package with ultra-thin dielectric layer
摘要 Bumpless build-up layer (BBUL) semiconductor packages with ultra-thin dielectric layers are described. For example, an apparatus includes a semiconductor die including an integrated circuit having a plurality of external conductive bumps. A semiconductor package houses the semiconductor die. The semiconductor package includes a dielectric layer disposed above the plurality of external conductive bumps. A conductive via is disposed in the dielectric layer and coupled to one of the plurality of conductive bumps. A conductive line is disposed on the dielectric layer and coupled to the conductive via.
申请公布号 US9520350(B2) 申请公布日期 2016.12.13
申请号 US201313801859 申请日期 2013.03.13
申请人 Intel Corporation 发明人 Teh Weng Hong;Davies-Venn Emile;Andideh Ebrahim;Raorane Digvijay A.;Sobieski Daniel N.
分类号 H01L23/498;H01L23/532;H01L21/768;H01L23/00 主分类号 H01L23/498
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A semiconductor package, comprising: a layer comprising a pattern of spaced apart conductive lines; a first dielectric layer disposed on and between the conductive lines of the pattern of spaced apart conductive lines; a second dielectric layer disposed above the first dielectric layer; a conductive via disposed in the first dielectric layer; a conductive routing line disposed in the second dielectric layer and coupled to the conductive via; and a patterned titanium nitride layer disposed directly between the first and second dielectric layers, wherein the conductive via is disposed in the patterned titanium nitride layer, and the conductive routing line is disposed on the patterned titanium nitride layer.
地址 Santa Clara CA US