Integrated circuits and methods for fabricating integrated circuits with self-aligned vias

摘要

Integrated circuits and methods for fabricating integrated circuits with self-aligned vias are disclosed. A method for fabricating an integrated circuit includes forming a first conductive interconnect line overlying a semiconductor substrate. The method forms an insulator cap defining a gap overlying the first conductive interconnect line. An upper interlayer dielectric material is deposited over the insulator cap and in the gap over the first conductive interconnect line. A via is etched through the upper interlayer dielectric material and into the gap to expose the first conductive interconnect line. The method deposits a conductive material into the via to form a conductive via in contact with the first conductive interconnect line.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
forming a first conductive interconnect line overlying a semiconductor substrate; after forming the first conductive interconnect line, forming an insulator cap defining a gap overlying the first conductive interconnect line; depositing an upper interlayer dielectric material over the insulator cap and in the gap over the first conductive interconnect line; etching a via through the upper interlayer dielectric material and into the gap to expose the first conductive interconnect line; and depositing a conductive material into the via to form a conductive via in contact with the first conductive interconnect line.