发明名称 |
Aging-based leakage energy reduction method and system |
摘要 |
A technique of reducing leakage energy associated with a post-silicon target circuit is generally described herein. One example method includes purposefully aging a plurality of gates in the target circuit based on a targeted metric including a timing constraint associated with the target circuit. |
申请公布号 |
US9520292(B2) |
申请公布日期 |
2016.12.13 |
申请号 |
US201314407072 |
申请日期 |
2013.01.06 |
申请人 |
EMPIRE TECHNOLOGY DEVELOPMENT LLC |
发明人 |
Potkonjak Miodrag |
分类号 |
G05F1/10;G05F3/02;H01L21/28;G06F17/50;H01L29/40 |
主分类号 |
G05F1/10 |
代理机构 |
Ren-Sheng International |
代理人 |
Ren-Sheng International |
主权项 |
1. A method to reduce leakage energy associated with a post-silicon target circuit, the method comprising:
selecting a plurality of gates in the target circuit to be aged; determining an extent to which to age the selected plurality of gates; identifying a first set of gates and a second set of gates of the selected plurality of gates that will be aged differently based on a targeted metric including a timing constraint associated with the target circuit; based on the targeted metric, aging, to the determined extent, the first set of gates; and based on the targeted metric, aging, to less than the determined extent, the second set of gates. |
地址 |
Wilmington DE US |