| 发明名称 | Ion implanter provided with a plurality of plasma source bodies | ||
| 摘要 | The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS1, CS2 free from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI1-BCS1, BCI2-BCS2 per source body CS1, CS2. | ||
| 申请公布号 | US9520274(B2) | 申请公布日期 | 2016.12.13 |
| 申请号 | US201314647193 | 申请日期 | 2013.11.25 |
| 申请人 | ION BEAM SERVICES | 发明人 | Torregrosa Frank;Roux Laurent |
| 分类号 | H01J37/36;H01J37/32 | 主分类号 | H01J37/36 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. An ion implanter for implanting ions in a substrate, said ion implanter comprising an enclosure having arranged therein a substrate carrier for carrying said substrate and connected to a substrate power supply via a high voltage electrical passage, the enclosure being provided with pump means, said enclosure (ENV) also having at least two cylindrical source bodies free from any obstacle and arranged facing said substrate carrier for simultaneous irradiation of said substrate; the ion implanter being characterized in that it includes at least one confinement coil per source body. | ||
| 地址 | Peynier FR | ||