| 摘要 |
PURPOSE:To obtain a method for manufacturing a capacity-type acceleration sensor by an etching technique. CONSTITUTION:A mask is, formed by photolighography at a frame portion 403 and a portion which becomes an original shape of a rounding of a joint of a beam 402 for both surfaces of a wafer 601, it is allowed to be narrower than a thickness of the thickness frame portion 403 of a mass portion 401 by anisotropic etching, and an insulation film 606 is formed at a portion which becomes the mass portion 401 by photolithography. Furthermore, the mask is formed at the mass portion, the original shape portion of the frame and beam portions, and the original shape portion of the rounding of the joint of the beam and a stage difference which is equivalent to a value which is at least equal to or more than the half thickness of the thickness of the beam portion 40 is formed by anisotropic etching. Only the mask on the beam portion 402 and the original shape of the rounding of the joint of the beam are eliminated and the beam portion 402 and the rounding of the joint of the beam as well as a penetration portion around it are formed simultaneously by anisotropic etching, thus enabling a center layer of constitution main portion of a capacity-type acceleration sensor with a large breakdown strength and a uniform shape to be machined. |
