| 摘要 |
<p>Thin film transistor elements are disposed on a substrate in a matrix form. The thin film transistor element includes a source electrode, a drain electrode, isolated layer of a semiconductor layer and a gate insulating film, and a gate electrode. Drain wires and gate wires are provided on the substrate, and they are connected to the drain electrode and source electrode, respectively. Each of intersections of the drain wires and the gate wires has another isolated layer of a semiconductor layer and a gate insulating film. Each of the drain wires has an isolated conductive film which is made of the same material as the gate wires. The conductive film is formed to be contact with each of the drain wires so as to electrically support the drain wires each. Pixel electrodes are provided on the substrate. Each of the pixel electrodes preferably has a overlapping section with the adjacent gate wire and an auxiliary capacitor with another isolated layer of a semiconductor and a gate insulating film is formed on the overlapping section. Any leakage current do not flow between the thin film transistor elements in this thin film transistor elements array because the isolated layers including a semiconductor layer are provide in island form. <IMAGE></p> |
