| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor power module which has less chances of malfunction and destruction due to switching surge voltage appearing at the time of switching operation by reducing parasitic inductance in the semiconductor power module. <P>SOLUTION: The semiconductor power module has such a structure that at least one of metal lead terminals for power at the same potential for electrically connecting the semiconductor power module and the outside includes an internal lead terminal 23a connected to a metal base printed board side via a lead terminal supporting section 24, and an external lead terminal 23b connected to the outside. The internal lead terminals and the external lead terminals are different in a pitch between terminals and the number of terminals. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
