| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an immersion liquid and pattern forming method using the same appropriate to reduce a resist top layer which is hardly dissolved, and resist pattern falling, as well as resist sensitivity variation that occurs during immersion exposure. <P>SOLUTION: The total content of the metal impurities is less than or equal with 10 ppb, in an immersion liquid with which a gap is filled between an optical lens and a silicon wafer inside an immersion type exposure system for exposure. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
