MANUFACTURING METHOD OF LASER IRRADIATION APPARATUS AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the filter characteristics by preventing roughening of the separation interface of a nitride semiconductor film irradiated by a laser beam. SOLUTION: A region where the intensity is locally strong or weak can be formed by irradiating uneven laser beam different in intensity distribution, even if the integral value (laser output) of laser intensity is coincident. At first the irradiation is carried out by a portion with weak laser intensity so as to give energy to the first semiconductor film, and subsequently the irradiation is carried out by a portion with strong laser intensity. A part of a first substrate and a first semiconductor film interface at least are made to separate completely by both the residual energy according to the irradiation by a portion with weak laser intensity and the energy of a portion with strong intensity. COPYRIGHT: (C)2006,JPO&NCIPI