发明名称 |
Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method |
摘要 |
A method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process is disclosed, in which the gate electrode, a metal silicide layer, a spacer, a silicon nitride cap layer, and a dielectric layer have been formed. The method includes performing a chemical mechanical polishing process to polish the dielectric layer using the silicon nitride cap layer as a polishing stop layer to expose the silicon nitride cap layer over the gate electrode; removing the exposed silicon nitride cap layer to expose the metal silicide layer; and performing a first etching process to remove the metal silicide layer on the gate electrode.
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申请公布号 |
US2007099423(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050163849 |
申请日期 |
2005.11.01 |
申请人 |
CHEN CHENG-KUEN;WU CHIH-NING;SHIAU WEI-TSUN;YU WEN-FU |
发明人 |
CHEN CHENG-KUEN;WU CHIH-NING;SHIAU WEI-TSUN;YU WEN-FU |
分类号 |
H01L21/302;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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