发明名称 STRUCTURE AND METHOD OF FABRICATING FINFET WITH BURIED CHANNEL
摘要 A method of manufacturing a fin structure comprises forming a first structure of a first material type on a wafer and forming a buried channel of a second material adjacent sidewalls of the first structure. The second material type is different than the first material type. The structure includes a first structure and a buried channel.
申请公布号 US2007099350(A1) 申请公布日期 2007.05.03
申请号 US20050163687 申请日期 2005.10.27
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ZHU HUILONG
分类号 H01L21/8232;H01L21/335 主分类号 H01L21/8232
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