发明名称 |
STRUCTURE AND METHOD OF FABRICATING FINFET WITH BURIED CHANNEL |
摘要 |
A method of manufacturing a fin structure comprises forming a first structure of a first material type on a wafer and forming a buried channel of a second material adjacent sidewalls of the first structure. The second material type is different than the first material type. The structure includes a first structure and a buried channel.
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申请公布号 |
US2007099350(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050163687 |
申请日期 |
2005.10.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG |
分类号 |
H01L21/8232;H01L21/335 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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