| 摘要 |
An overlay mark of the semiconductor device and a method for forming the same are provided to predict the overlay of cell on a real time basis by detecting the number of deformity by the voltage contrast detection principle of the electron beam defect inspection. A cross section of the conductor(11) is the straight line. The conductor is provided to one side of the semiconductor substrate. A plurality of contact plugs(17) are formed on the other side corresponding to the cross section of the conductor. The plurality of contact plugs are arranged with the planar structure of being crossed of triangle. The corner of the planar structure of triangle is located on the conductor. The plurality of contact plugs are distanced from the corner with the regular interval. The plurality of contact plugs are arranged to be crossed over each other.
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