| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin silicon substrate, while assuring a production yield rate. <P>SOLUTION: The method comprises a step for forming an internal reform layer 14 including polycrystal grains of polycrystal silicon on a surface of a substrate within a range at a predetermined depth from the surface of the substrate 10 in a horizontal direction by collecting a laser light 190 from a laser light source 160, a condenser lens 170 and an aberration adjusting plate 180 to the substrate 10 and relatively moving the laser light 190 and the substrate 10; and a step for cutting the substrate 10 at the internal reform layer 14 or in the vicinity of the internal reform layer 14. <P>COPYRIGHT: (C)2012,JPO&INPIT |
