| 发明名称 | Light emitting device | ||
| 摘要 | The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2. | ||
| 申请公布号 | US9397257(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201514622361 | 申请日期 | 2015.02.13 |
| 申请人 | LG INNOTEK CO., LTD. | 发明人 | Park Hae Jin;Kim Kyoung Hoon;Kim Dong Ha;Lee Kwang chil;Kim Jae Hun;Yun Hwan Hui |
| 分类号 | H01L33/32;H01L33/54;H01L33/06;H01L33/12;H01L21/02;H01L33/02;H01L33/62;H01L33/00;H01L33/20 | 主分类号 | H01L33/32 |
| 代理机构 | KED & Associaates, LLP | 代理人 | KED & Associaates, LLP |
| 主权项 | 1. A light emitting device comprising: a substrate; a light emitting semiconductor structure disposed on the substrate; and an intermediate layer interposed between the light emitting semiconductor structure and the substrate, wherein: the light emitting semiconductor structure comprises a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure comprising at least one period of a pair structure of a quantum barrier layer and a quantum well layer; the intermediate layer comprises AN and has a plurality of air voids formed in the AN, wherein at least some of the air voids are irregularly aligned; and the number of the air voids is 107/cm2 to 1010/cm2. | ||
| 地址 | Seoul KR | ||