SRAM cell and method for manufacturing the same

摘要

In one embodiment, a SRAM cell may include a substrate and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the substrate. The first FinFET may include a first fin which is formed in a semiconductor layer provided on the substrate and abuts the semiconductor layer, and the second FinFET may include a second fin which is formed in the semiconductor layer and abuts the semiconductor layer. The semiconductor layer may include a plurality of semiconductor sub-layers. The first and second fins can include different number of the semiconductor sub-layers and have different heights from each other.

主权项

1. A Static Random Access Memory (SRAM) cell, comprising:
a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer comprises a plurality of stacked semiconductor sub-layers; and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the substrate, wherein the first FinFET comprises a first fin, the first fin being formed of a first number of semiconductor sub-layers of the plurality of stacked semiconductor sub-layers in the semiconductor layer, and the first fin having a first height; wherein the second FinFET comprises a second fin, the second fin being formed of a second number of semiconductor layers of the plurality of stacked semiconductor sub-layers in the semiconductor layer, and the second fin having a second height, and wherein a total number of the first number of semiconductor sub-layers and a total number of the second number of semiconductor sub-layers are different from each other, the first fin and the second fin being located on different semiconductor sub-layers with different levels, and the first height of the first fin being different from the second height of the second fin, and wherein first adjacent semiconductor sub-layers in the first number of the plurality of stacked semiconductor sub-layers in the semiconductor layer comprise different materials, and have etching selectivity with respect to each other, and second adjacent semiconductor sub-layers in the second number of the plurality of stacked semiconductor sub-layers in the semiconductor layer comprise different materials, and have etching selectivity with respect to each other.