发明名称 |
Magnetic random access memory having perpendicular composite reference layer |
摘要 |
The present invention is directed to an STT-MRAM device including a plurality of magnetic tunnel junction (MTJ) memory elements. Each of the memory elements comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer, the first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer plane thereof, the magnetic fixed layer has a second invariable magnetization direction that is substantially perpendicular to layer plane thereof and is opposite to the first invariable magnetization direction. |
申请公布号 |
US9396781(B2) |
申请公布日期 |
2016.07.19 |
申请号 |
US201414173145 |
申请日期 |
2014.02.05 |
申请人 |
Avalanche Technology, Inc. |
发明人 |
Zhou Yuchen;Wang Zihui;Gan Huadong;Huai Yiming |
分类号 |
H01L43/02;G11C11/16;H01F10/32;H01F41/30;H01L29/66;H01L43/08;B82Y25/00 |
主分类号 |
H01L43/02 |
代理机构 |
|
代理人 |
Yen Bing K. |
主权项 |
1. A spin transfer torque magnetic random access memory (STT-MRAM) device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising:
a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from said magnetic reference layer structure by an anti-ferromagnetic coupling layer, wherein said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by an intermediate magnetic reference layer, said first, second, and intermediate magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof, said magnetic fixed layer having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is opposite to said first invariable magnetization direction. |
地址 |
Fremont CA US |