SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a semiconductor device and a manufacturing method thereof. An objective of the present invention is to reduce the entire thickness of the semiconductor device by realizing a mono-layer wherein a solder ball is directly connected to a wiring pattern layer, to reduce require production costs for forming a via, and to prevent a failure related to the via. To this end, the present invention discloses a manufacturing method of a semiconductor device, which includes the steps of: forming a wiring pattern layer, which is a conductive pattern, on a first surface of a dummy panel as a mono-layer; mounting a semiconductor die on a wiring pattern layer such that a conductive copper filler of the semiconductor die is electrically connected to the wiring pattern layer; forming an encapsulant to cover the first surface of a dummy panel, the wiring pattern layer and the semiconductor die; removing the dummy panel from the wiring pattern layer and the encapsulant so as to expose the encapsulant and the wiring pattern layer to the outside; and forming a solder ball on the pattern layer which is exposed to the outside.