Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

主权项

1. A semiconductor device comprising:
a first flexible substrate; an organic compound layer in which inorganic compound particles are dispersed over and in contact with the first flexible substrate; an insulating layer over and in direct contact with the organic compound layer; an electrophoresis element over and in direct contact with the insulating layer; and a second flexible substrate over and in direct contact with the electrophoresis element, wherein the inorganic compound particles comprise one of silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, and barium fluoride magnesium, wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride, and wherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule.