| 摘要 |
The method for continuously making of the polycrystalline high purity silicon grain is provided. The method for manufacturing the high purity polysilicon grain by depositing the reaction gas on the polysilicon grain(26) in a reactor is provided. (I) Reactor comprises the reactor space divided by two or more regions. (II) By using the each nozzle(4), the gas containing no silicon is introduced to the silicon grain and the lower section is weakly fluidized. (III) The addition region is directly contacted with the first region. (IV) This region is heated through the wall of the outer side. (V) By using one or a plurality of nozzles, the silicon containing reaction gas is introduced to the active region formed in reactor as the vertical upward gas jet at high speed. (VI) In this case, the reaction gas is introduced to react nearly the reaction gas to the chemical equilibrium before reaching the fluidized phase wall or the fluidized phase surface.
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