Method for processing a carrier and an electronic component

摘要

In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

主权项

1. A method for processing a carrier, the method comprising:
forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer, forming a second catalytic metal layer over the source layer, wherein a thickness of the second catalytic metal layer is larger than a thickness of the first catalytic metal layer; and subsequently performing an anneal enabling diffusion of a material of the source layer so as to form an interface layer adjacent to the surface of the carrier from the diffused material of the source layer; and adapting the thickness of the catalytic metal layers, the thickness of the source layer, and the anneal such that a conformal interface layer is formed during the anneal, the conformal interface layer having a two dimensional lattice structure.