Processing systems and methods for halide scavenging

摘要

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

主权项

1. A method of etching a substrate, the method comprising:
providing a substrate comprising silicon and having a silicon oxide layer overlying the silicon; etching the substrate in a first etching process, wherein the first etching process is selective to silicon oxide over silicon; etching the substrate in a second etching process, wherein the second etching process is selective to silicon over silicon oxide; and treating the substrate with a third process, wherein the third process comprises directing plasma effluents at the surface of the substrate, wherein the plasma effluents are produced from a nitrogen-containing precursor and a fluorine-containing precursor, and wherein the plasma effluents remove up to about 12 angstrom of the silicon oxide layer across an entire exposed surface of the silicon oxide layer but maintains at least a portion of the silicon oxide layer.