Method for manufacturing silicon carbide semiconductor device

摘要

In a state where a silicon carbide substrate having a first main surface and second main surface opposite to each other is fixed to a base material having a higher flexibility than the silicon carbide substrate, silicon carbide on a side of second main surface of silicon carbide substrate is removed, and an electrode is formed on the second main surface. The base material has an area which is smaller than or equal to an area of the first main surface of the silicon carbide substrate. In the step of fixing silicon carbide substrate to the base material, the base material is arranged at a position of covering a center of the first main surface so that the base material does not extend beyond an outer circumference of the first main surface.

主权项

1. A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:
fixing a silicon carbide substrate having a first main surface and a second main surface opposite to each other to a base material having a higher flexibility than said silicon carbide substrate; removing silicon carbide on a side of said second main surface of said silicon carbide substrate in a state where said silicon carbide substrate is fixed to said base material; and forming an electrode on said second main surface of said silicon carbide substrate from which said silicon carbide is removed in a state where said silicon carbide substrate is fixed to said base material, said base material having an area smaller than or equal to an area of said first main surface of said silicon carbide substrate, in said step of fixing to a base material, said base material is arranged at a position of covering a center of said first main surface so that said base material does not extend beyond an outer circumference of said first main surface, said first main surface includes an outer circumferential region, which is a region within 1.5 mm from said outer circumference of said first main surface towards said center, and a central region surrounded by said outer circumferential region, said base material entirely covers said central region, and a part of said outer circumferential region is exposed without being covered with said base material.