Interface adhesion improvement method

摘要

The present disclosure describes methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.

主权项

1. A method of forming a buffer layer on a surface of a substrate, comprising:
providing a substrate having a planarization material disposed on an OLED device formed on the substrate in a processing chamber, wherein the planarization material is a polymer material substantially encapsulating entire structures of the OLED device; supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber; controlling a substrate temperature less than about 100 degrees Celsius; forming a buffer layer on the planarization material to encapsulate the OLED device, wherein the buffer layer is an inorganic material; supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber; and forming an encapsulating barrier layer on the buffer layer encapsulating the OLED device.