| 摘要 |
Provided is a plasma treatment apparatus, which comprises a chamber for accommodating a substrate to be treated, a plasma generating mechanism for generating a plasma in the chamber, a treating gas feeding mechanism for feeding a treating gas into the chamber, an evacuation mechanism connected to the chamber for evacuating the chamber, a substrate placing bed placing the treated substrate in the chamber and including a placing bed body and a heating element for heating the substrate mounted in the body, a supporting unit for supporting the substrate placing bed, a fixing unit for fixing the supporting unit in the chamber, and electrodes for feeding an electric power to the heating element. The heating element and the electrodes are made of a material containing SiC. The electrodes are fixed in the fixing unit and extended through the supporting unit so that their leading end portions are connected with the heating element. Further comprised are electrode covering members which are made of an insulating material containing quartz and disposed to cover the electrodes but for the leading end portions and to extend through the portion of the substrate placing bed below the heating element, the supporting unit and the fixing unit.
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