Memory cells, memory arrays, and methods of forming memory cells and arrays

摘要

Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.

主权项

1. A method of forming memory cells, comprising:
forming a plurality of heater structures over an array of electrical nodes; the array of electrical nodes having rows extending along a first direction and having columns extending along a second direction substantially orthogonal to the first direction; wordlines being under the array of electrical nodes and extending along the first direction; forming a phase change material across the plurality of heater structures; patterning the phase change material into a plurality of confined structures; the plurality of confined structures being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures in the plurality of confined structures; each confined structure of the plurality of confined structures being associated with only a single memory cell; and forming bitlines across the plurality of confined structures, with the bitlines extending along the second direction; and wherein the plurality of heater structures are patterned from heater material strips that extend along the first direction and along paired rows of the array of electrical nodes; and wherein the patterning of the phase change material into the plurality of confined structures comprises:
forming first trenches through the phase change material and the heater material strips, with the first trenches extending along the first direction and cutting the heater material strips into lines of heater material that are in one-to-one correspondence with the rows of the array of electrical nodes;lining the first trenches with a first insulative material of the one or more insulative materials;after forming and lining the first trenches, forming second trenches through the phase change material and the lines of heater material, with the second trenches extending along the second direction and patterning the lines of heater material into the plurality of heater structures; andlining the second trenches with a second insulative material of the one or more insulative materials.