| 发明名称 | Magnetic memory device and method for forming the same | ||
| 摘要 | Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous. | ||
| 申请公布号 | US9484526(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514656659 | 申请日期 | 2015.03.12 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Jeong Dae-Eun;Kim Sang-Yong;Song Yoon-Jong |
| 分类号 | H01L43/08;H01L43/02;G11C11/16;G11C13/00 | 主分类号 | H01L43/08 |
| 代理机构 | Renaissance IP Law Group LLP | 代理人 | Renaissance IP Law Group LLP |
| 主权项 | 1. A magnetic memory device, comprising: a magnetic tunnel junction pattern disposed on a substrate and including a fixed magnetic pattern, a free magnetic pattern and a tunnel barrier pattern located between the fixed magnetic pattern and the free magnetic pattern; an upper electrode disposed on the magnetic tunnel junction pattern; and a crystallinity conserving pattern disposed between the magnetic tunnel junction pattern and the upper electrode, wherein at least a portion of the crystallinity conserving pattern comprises an amorphous layer. | ||
| 地址 | KR | ||