Germanium photodetector schottky contact for integration with CMOS and Si nanophotonics

摘要

A method of forming an integrated photonic semiconductor structure having a photodetector device and a CMOS device may include depositing a dielectric stack over the photodetector device such that the dielectric stack encapsulates the photodetector. An opening is etched into the dielectric stack down to an upper surface of a region of an active area of the photodetector. A first metal layer is deposited directly onto the upper surface of the region of the active area via the opening such that the first metal layer may cover the region of the active area. Within the same mask level, a plurality of contacts including a second metal layer are located on the first metal layer and on the CMOS device. The first metal layer isolates the active area from the occurrence of metal intermixing between the second metal layer and the active area of the photodetector.

主权项

1. An integrated photonic semiconductor structure comprising:
a semiconductor substrate; a Schottky metal contact; a plurality of contacts; a dielectric stack having an opening; a photodetector device located on the semiconductor substrate, the photodetector device having an active area region encapsulated by the dielectric stack and the Schottky metal contact, the Schottky metal contact located within the opening of the dielectric stack and in direct contact with a portion of the active area region and one of the plurality of contacts; and a CMOS device located on the semiconductor substrate, the CMOS device coupled to at least one other of the plurality of contacts, wherein the Schottky metal contact isolates the portion of active area region from an occurrence of metal intermixing between the one of the plurality of contacts and the portion of the active area region.