发明名称 |
Semiconductor device having non-magnetic single core inductor and method of producing the same |
摘要 |
Integrated circuits with single core inductors and methods for producing them are provided. Embodiments include forming a trench in a dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the dielectric layer and in strips in the trench; forming metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias; filling the first metal line trenches, first vias, and trench; forming another dielectric layer and a second metal-oxide hard mask over the filled trench; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias; and filling the second metal line trenches, second vias, and second trench. |
申请公布号 |
US9484297(B2) |
申请公布日期 |
2016.11.01 |
申请号 |
US201514656770 |
申请日期 |
2015.03.13 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Lee Ki Young;Chae Moosung M.;Kim Woo Sik |
分类号 |
H01L27/08;H01L23/522;H01L21/768;H01L21/02;H01L23/532;H01L49/02 |
主分类号 |
H01L27/08 |
代理机构 |
Ditthavong & Steiner, P.C. |
代理人 |
Ditthavong & Steiner, P.C. |
主权项 |
1. A method comprising:
forming an inductor trench in a first dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the first dielectric layer and in strips in the inductor trench; forming first metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias through both the first metal-oxide hard mask and the first dielectric layer; filling the first metal line trenches, first vias, and inductor trench and removing the first metal-oxide hard mask from the first dielectric layer; forming a second dielectric layer and a second metal-oxide hard mask over the filled inductor trench, first vias and first metal line trenches and the first dielectric layer; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias through both the second metal-oxide hard mask and the second dielectric layer down to the first metal line trenches and first vias, respectively; and filling the second metal line trenches, second vias, and second trench. |
地址 |
Grand Cayman KY |