Sub-lithographic patterning of magnetic tunneling junction devices

摘要

A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer. Such a method further includes depositing a film into the recess to create a keyhole pattern within the deposited film. The method further includes transferring the keyhole pattern through a hard mask layer to an MTJ stack. The method also includes depositing a conductive material into the transferred keyhole pattern and on an MTJ stack. The method also includes removing the hard mask layer to create a conductive hard mask pillar.

主权项

1. A method for fabricating a magnetic tunnel junction (MTJ) device, comprising:
creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer; depositing a film into the recess to create a keyhole pattern within the deposited film; transferring the keyhole pattern through a hard mask layer to an MTJ stack; depositing a conductive material into the transferred keyhole pattern and on the MTJ stack; and removing the hard mask layer to create a conductive hard mask pillar.