Semiconductor devices with germanium-rich active layers and doped transition layers

摘要

Semiconductor device stacks and devices made there from having Ge-rich device layers. A Ge-rich device layer is disposed above a substrate, with a p-type doped Ge etch suppression layer (e.g., p-type SiGe) disposed there between to suppress etch of the Ge-rich device layer during removal of a sacrificial semiconductor layer richer in Si than the device layer. Rates of dissolution of Ge in wet etchants, such as aqueous hydroxide chemistries, may be dramatically decreased with the introduction of a buried p-type doped semiconductor layer into a semiconductor film stack, improving selectivity of etchant to the Ge-rich device layers.

主权项

1. A semiconductor device, comprising:
a germanium (Ge)-rich fin disposed above a substrate; a SiGe transition layer disposed above the substrate, and below the fin; and an n-type SiGe layer disposed above the substrate, and below the SiGe transition layer.