Manufacturing method and structure of thin film transistor backplane

摘要

The present invention provides a manufacture method of a thin film transistor backplane, comprising steps of: providing a substrate (20) with a gate (21), an insulation layer (22) and a semiconducting layer (23); sequentially forming a second metal layer, a reflecting electrode layer and a conductive oxide layer on the substrate (20); implementing one photolithographic process to the second metal layer, the reflecting electrode layer and the conductive oxide layer to pattern the second metal layer, the reflecting electrode layer and the conductive oxide layer for respectively forming a source/a drain (253), a reflecting electrode (252) and a pixel electrode (251), and the source/the drain (253) are connected to the semiconducting layer (23; forming a protective layer on the source/the drain (253), the reflecting electrode (252) and the pixel electrode (251; forming a flat and pixel defining layer (27) on the protective layer (26); forming a photospacer (28) on the flat and pixel defining layer (27).

主权项

1. A structure of a thin film transistor backplane, comprising: a source and a drain that, a reflecting electrode located on the source and the drain, a pixel electrode located on the reflecting electrode, a protective layer located on the pixel electrode, a flat and pixel defining layer located on the protective layer and a photospacer located on the flat and pixel defining layer, wherein the source and the drain, the reflecting electrode, and the pixel electrode are laminated on each other such that the reflecting electrode is directly interposed between the source and the drain and the pixel electrode.