| 摘要 |
PROBLEM TO BE SOLVED: To improve a withstanding voltage of a MOS by a simple field plate structure.SOLUTION: A semiconductor device comprises a field plate formed of polysilicon on an outer peripheral part, and whose one end part is connected at a drain potential and whose the other end part is connected at a source potential. In a structure of the field plate, concave and convex shapes are alternately repeated in a section from the drain potential connection side to the source potential connection side. Due to this structure, a semiconductor device having a high withstanding voltage can be obtained at low cost without complicating the field plate structure.SELECTED DRAWING: Figure 3 |
