Integrated circuit memory device with a redundant memory block

摘要

A semiconductor memory device is provided with a plurality of primary memory cell blocks and a replacement memory cell block identical in size to the primary memory cell blocks. The replacement memory block includes all the required analog row and column driver and sense circuitry for the memory cells contained in the replacement block. Each of the primary memory blocks has a laser fuse that will disable the associated primary memory block and enable the replacement memory block such that the total amount of logical memory in the memory device is unaffected by a defective primary block.