| 摘要 |
PURPOSE:To easily obtain resist patterns which are rectangular in section and have a high resolution and high selection ratio by a simplified process. CONSTITUTION:This ground surface material for lithography is constituted by consisting the material of a copolymer of glycidyl methacrylate and methyl methacrylate or incorporating a UV absorbent therein. This method forms patterns by successively executing (A) a stage for forming a first layer consisting of the ground surface material on a substrate, (B) a stage for providing a second layer consisting of a positive type resist on this first layer, then patterning the layer by exposing, then development processing, (C) a stage for sylilating the patterned resist layer by silicon-contg. vapor and (D) a stage for patterning the first layer consisting of the ground surface material by a dry etching method using gaseous oxygen with the resist patterns subjected to the sylilation treatment as a mask. |
