| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a pattern of a semiconductor device, in which a photoresist pattern of a line pattern is formed, and by using a resist flow process, a further finer line pattern can be formed, wherein the photoresist pattern of the line pattern is formed by overlapping a plurality of contact hole patterns on a line. <P>SOLUTION: The method of forming the pattern of the semiconductor device includes a step of forming a photoresist film on a semiconductor substrate, a step of carrying out an exposure process in which a photomask that includes a plurality of light transmitting patterns arranged on a line is used, and a portion of the photoresist film that corresponds to the light transmitting patterns and to regions between the light transmitting patterns is exposed using the photomask, and a step of forming a photoresist pattern by carrying out a developing process in such a way that the exposed portion of the photoresist film that corresponds to the light transmitting patterns and to regions between the light transmitting patterns forms an opening of a line geometry. <P>COPYRIGHT: (C)2009,JPO&INPIT |
