| 摘要 |
An insular shaped polycrystalline silicon film is formed by adhering its entire bottom face to the surface of a insulation film which is formed on the main face of a silicon substrate. A resistance element which contains designated impurities is formed in the central part of the polycrystalline silicon film. A non-doping region which essentially does not contain impurities and is adheres to all the sides of the resistance element, is positioned on the peripheral region except for the central part of the polycrystalline silicon film. By performing heat treatment when a non-doping amorphous silicon pattern is formed on the insulating film, the amorphous silicon pattern is convened to a non-doping polycrystalline silicon pattern. By using this method, a semiconductor device which has only small variances in its resistance value, which provides more efficient heat radiation, and which enables higher integration of a silicon substrate can be obtained.
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