OPTICAL PROXIMITY CORRECTION METHOD FOR INTERMEDIATE-PITCH FEATURES USING SUB-RESOLUTION SCATTERING BARS
摘要
A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.
申请公布号
WO9838549(A1)
申请公布日期
1998.09.03
申请号
WO1998US02100
申请日期
1998.02.20
申请人
MICROUNITY SYSTEMS ENGINEERING, INC.
发明人
CHEN, JANG, FUNG;WAMPLER, KURT, E.;LAIDIG, THOMAS, L.