| 摘要 |
PROBLEM TO BE SOLVED: To enable a light-emitting device possessed of a transparent substrate of GaP, GaAsP, GaAlAs, GaN or the like to be improved in emission brightness. SOLUTION: An N-type semiconductor layer 3, a P-type semiconductor layer 4, and a light-emitting layer 5 are formed on an N-type semiconductor substrate 2, an N-electrode 2a and a P-electrode 4a are each formed on the N-type semiconductor substrate 2 and the P-type semiconductor layer 4, and a semiconductor light-emitting device 1 is mounted on the mounting surface of the mount 21b of a lead frame 21, making the N-type semiconductor substrate 2 located on a light-emitting direction side and the light-emitting layer 5 which is located on the mounting surface side of the mount 21b respectively. |
